DocumentCode
1778628
Title
Synthesis and dielectric properties of BaTi1−x Zrx O3 -based ceramic and film materials
Author
Suslov, A. ; Durilin, D. ; Ovchar, O. ; Belous, A. ; Bovtun, V. ; Kempa, Martin ; Jancar, B. ; Spreitzer, M.
Author_Institution
V.I. Vernadskii Inst. of Gen. & Inorg. Chem., Kiev, Ukraine
fYear
2014
fDate
15-18 April 2014
Firstpage
66
Lastpage
69
Abstract
The process of formation of BaTi1-xZrxO3 solid solutions (0.2 ≤ × ≤ 0.5) with perovskite structure has been studied. The phase composition, microstructure and electrophysical properties of BaTi1-xZrxO3 ceramic and film materials have been investigated. It has been shown that when zirconium content of ceramic materials is increased, a decrease in permittivity (ε) and loss (tan δ) is observed. In this case, the nonlinearity factor (nR) retains high values (nR = 30-50 %) in relatively weak electric fields (E = 30-60 kV/cm). BaTi0.6Zr0.4O3 films have been obtained by sol-gel method. The dielectric properties of films in the microwave range have been investigated.
Keywords
barium compounds; ceramics; dielectric losses; dielectric thin films; permittivity; sol-gel processing; solid solutions; titanium compounds; BaTi1-xZrxO3; barium titanate zirconium oxide based ceramic; dielectric film materials; dielectric loss; dielectric properties; electrophysical properties; microstructure; microwave range; nonlinearity factor; permittivity; perovskite structure; phase composition; relatively weak electric fields; sol-gel method; solid solutions; Ceramics; Dielectrics; Films; Solids; Temperature; Zirconium; ceramics; dielectric; films; microwave; sol-gel;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Nanotechnology (ELNANO), 2014 IEEE 34th International Conference on
Conference_Location
Kyiv
Print_ISBN
978-1-4799-4581-8
Type
conf
DOI
10.1109/ELNANO.2014.6873964
Filename
6873964
Link To Document