DocumentCode
1778719
Title
InGaN-based nanocoumn emitters suitable for display applications
Author
Kishino, Katsumi ; Yanagihara, Ai ; Ishizawa, Shunsuke
Author_Institution
Sophia Univ., Tokyo, Japan
fYear
2014
fDate
12-16 Oct. 2014
Firstpage
20
Lastpage
21
Abstract
In this paper, the emission characteristics based on photonic crystal effect of nanocolumn LEDs are discussed. The device exhibited electroluminescence (EL) and photoluminescence (PL) spectra with the narrow linewidth as well as with the sharp radiation beam profile, when the photonic band edge was controlled to be coincident with bandgap of the InGaN/GaN MQW emission region.
Keywords
III-V semiconductors; LED displays; electroluminescence; gallium compounds; indium compounds; nanophotonics; nanostructured materials; photoluminescence; photonic band gap; photonic crystals; spectral line narrowing; InGaN-GaN; LED displays; electroluminescence; emission characteristics; high directional radiation beam profile; nanocolumn emitters; narrow linewidth; photoluminescence; photonic band edge; photonic bandgap; photonic crystal effect; sharp radiation beam profile; Crystals; Gallium nitride; Lenses; Light emitting diodes; Photonic crystals; Photonics; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2014 IEEE
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/IPCon.2014.6994969
Filename
6994969
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