Title :
InGaN-based nanocoumn emitters suitable for display applications
Author :
Kishino, Katsumi ; Yanagihara, Ai ; Ishizawa, Shunsuke
Author_Institution :
Sophia Univ., Tokyo, Japan
Abstract :
In this paper, the emission characteristics based on photonic crystal effect of nanocolumn LEDs are discussed. The device exhibited electroluminescence (EL) and photoluminescence (PL) spectra with the narrow linewidth as well as with the sharp radiation beam profile, when the photonic band edge was controlled to be coincident with bandgap of the InGaN/GaN MQW emission region.
Keywords :
III-V semiconductors; LED displays; electroluminescence; gallium compounds; indium compounds; nanophotonics; nanostructured materials; photoluminescence; photonic band gap; photonic crystals; spectral line narrowing; InGaN-GaN; LED displays; electroluminescence; emission characteristics; high directional radiation beam profile; nanocolumn emitters; narrow linewidth; photoluminescence; photonic band edge; photonic bandgap; photonic crystal effect; sharp radiation beam profile; Crystals; Gallium nitride; Lenses; Light emitting diodes; Photonic crystals; Photonics; Wavelength measurement;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6994969
