DocumentCode :
1778723
Title :
Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED
Author :
Mishra, Pawan ; Tien Khee Ng ; Janjua, Bilal ; Chao Shen ; Eid, Jessica ; Alyamani, Ahmed Y. ; El-Desouki, Munir M. ; Ooi, Boon S.
Author_Institution :
Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
fYear :
2014
fDate :
12-16 Oct. 2014
Firstpage :
22
Lastpage :
23
Abstract :
We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ~20 times higher injection levels (~275 A/cm2) compared to a conventional step-MQWs microLED (~14 A/cm2).
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; InGaN-GaN; MQW; microLED; multiplequantum-well; quantum efficiency; Current density; Density measurement; Gallium nitride; Light emitting diodes; MOCVD; Quantum well devices; Solid state lighting; Compositional grading; Efficiency droop; InGaN/GaN MQWs; Light emitting diode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/IPCon.2014.6994970
Filename :
6994970
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1778723
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