• DocumentCode
    1778723
  • Title

    Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED

  • Author

    Mishra, Pawan ; Tien Khee Ng ; Janjua, Bilal ; Chao Shen ; Eid, Jessica ; Alyamani, Ahmed Y. ; El-Desouki, Munir M. ; Ooi, Boon S.

  • Author_Institution
    Photonics Lab., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
  • fYear
    2014
  • fDate
    12-16 Oct. 2014
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at ~20 times higher injection levels (~275 A/cm2) compared to a conventional step-MQWs microLED (~14 A/cm2).
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; InGaN-GaN; MQW; microLED; multiplequantum-well; quantum efficiency; Current density; Density measurement; Gallium nitride; Light emitting diodes; MOCVD; Quantum well devices; Solid state lighting; Compositional grading; Efficiency droop; InGaN/GaN MQWs; Light emitting diode;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/IPCon.2014.6994970
  • Filename
    6994970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1778723