DocumentCode :
1779155
Title :
Dynamic control of narrowband thermal emission
Author :
Inoue, Takuya ; De Zoysa, Menaka ; Asano, Takashi ; Noda, Susumu
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
fYear :
2014
fDate :
12-16 Oct. 2014
Firstpage :
585
Lastpage :
586
Abstract :
We demonstrate dynamic control of narrowband (Q=70) thermal emission with a large change in emissivity (0.74 to 0.24) and a modulation frequency of ~1MHz, which is four orders of magnitude faster than in conventional devices.
Keywords :
III-V semiconductors; aluminium compounds; emissivity; gallium arsenide; optical modulation; p-i-n diodes; semiconductor quantum wells; GaAs; GaAs-Al0.3Ga0.7As; dynamic control; emissivity; modulation frequency; n-type multiple quantum wells; narrowband thermal emission; p-i-n GaAs diode; Absorption; Frequency modulation; Gallium arsenide; Narrowband; Photonic crystals; Slabs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/IPCon.2014.6995276
Filename :
6995276
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779155
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