Title :
Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension
Author :
Wen-Teng Chang ; Yu-Seng Lin ; Cheng-Ting Shih
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Abstract :
Both threshold voltage and transconductance shifting of cap Si and SiGe are consistent with the tendency of the W/L ratio. However, the variation of this critical ratio for the enhancement or degradation in p-channel at different cut areas implies the importance of process stability. The piezoresistance coefficients of [110] strained SiGe elucidates the enhancement or degradation of both p-/n-channels.
Keywords :
Ge-Si alloys; electrical conductivity; piezoresistance; semiconductor materials; SiGe; n-channel; p-channel; piezoresistance coefficients; strained-SiGe channel dimension; threshold voltage; transconductance shifting; Degradation; Logic gates; Piezoresistance; Silicon; Silicon germanium; Threshold voltage; Transconductance;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874622
