• DocumentCode
    1779163
  • Title

    Phosphorus delta-doping in germanium

  • Author

    Scappucci, Giordano

  • Author_Institution
    Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    We have demonstrated that phosphorus delta-doping of germanium in ultra-high vacuum is a promising technique to tune doping at high densities (>1020 cm-3) in thin Ge films. Eventually, high doping densities on demand for photonic or electronic applications may be delivered by suitably choosing the total number of layers, tuning their separation in the δ-layer stack, and engineering the amount of P incorporated in each layer.
  • Keywords
    doping profiles; elemental semiconductors; germanium; phosphorus; semiconductor doping; semiconductor epitaxial layers; δ-layer stack; Ge:P; doping density; electronic application; germanium thin films; phosphorus delta-doping; photonic application; ultrahigh vacuum; Adsorption; Australia; Decision support systems; Educational institutions; Electronic mail; Germanium; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874623
  • Filename
    6874623
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779163