Title :
Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces
Author :
Yamamoto, Koji ; Dong Wang ; Nakashima, Hideharu
Author_Institution :
Art, Sci. & Technol. Center for Cooperative Res., Kyushu Univ., Kasuga, Japan
Abstract :
ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.
Keywords :
Fermi level; elemental semiconductors; germanium; hafnium compounds; interface states; interface structure; semiconductor-insulator boundaries; titanium compounds; zirconium compounds; Fermi level pinning alleviation; HfN-Ge; HfN/Ge interfaces; TiN-Ge; ZrN-Ge; capacitance-voltage characteristics; current density-voltage characteristics; current-temperature characteristics; electrical properties; interfacial structures; Educational institutions; Electronic mail; Three-dimensional displays; Tin;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874625
