• DocumentCode
    1779167
  • Title

    Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

  • Author

    Yamamoto, Koji ; Dong Wang ; Nakashima, Hideharu

  • Author_Institution
    Art, Sci. & Technol. Center for Cooperative Res., Kyushu Univ., Kasuga, Japan
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    91
  • Lastpage
    92
  • Abstract
    ZrN and HfN/Ge contacts showed FLP alleviation similar to TiN/Ge. Especially, ZrN indicated stronger alleviation than TiN. About all materials, the ΦBPs estimated using J-V and C-V methods are almost the same. It is supposed that the interfacial structures of metal nitride/Ge are uniform.
  • Keywords
    Fermi level; elemental semiconductors; germanium; hafnium compounds; interface states; interface structure; semiconductor-insulator boundaries; titanium compounds; zirconium compounds; Fermi level pinning alleviation; HfN-Ge; HfN/Ge interfaces; TiN-Ge; ZrN-Ge; capacitance-voltage characteristics; current density-voltage characteristics; current-temperature characteristics; electrical properties; interfacial structures; Educational institutions; Electronic mail; Three-dimensional displays; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874625
  • Filename
    6874625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779167