• DocumentCode
    1779179
  • Title

    Study of Si-based Ge heteroepitaxy using RPCVD

  • Author

    Lei Yao ; Renrong Liang ; Chunsheng Jiang ; Jing Wang ; Jun Xu

  • Author_Institution
    Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    93
  • Lastpage
    94
  • Abstract
    It is demonstrated that Ge epilayers with high quantity, low defect density and smooth surface were achieved using cycle method. In addition, the epitaxy of GaAs on the Ge epilayer/Si substrate is also prepared.
  • Keywords
    elemental semiconductors; germanium; plasma CVD; semiconductor epitaxial layers; semiconductor growth; silicon; Ge; Ge epilayers; Ge-Si; RPCVD; Si; Si-based Ge beteroepitaxy; cycle method; high quantity; low defect density; smooth surface;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874631
  • Filename
    6874631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779179