Title :
TiO2 assisted sensitivity enhancement in photosensitive nanocrystal skins
Author :
Yeltik, Aydan ; Akhavan, Shahab ; Demir, Hilmi Volkan
Author_Institution :
Dept. of Phys., Bilkent Univ., Ankara, Turkey
Abstract :
Summary form only given. This paper demonstrated the great broadband enhancement in the sensitivity of light-sensitive nanocrystal skin (LS-NS) via the transfer of photogenerated electrons to the TiO2 layer. With the integration of TiO2 as an electron acceptor, a decrease in the electron-hole recombination probability resulting in broadband sensitivity improvement across 350-475 nm and a significant photovoltage sensitivity improvement in the proposed nanostructure platform were achieved. It was also observed that the controlled thickness between the CdTe monolayer and the TiO2 layer enables the rise in sensitivity to the percentage values of 22%. Therefore, it is believed that these results are not only scientifically interesting but also technologically important and useful. These findings have significant implications for the future design of photosensing platforms and for moving toward the next generation of large-surface light-sensing devices based on semiconductor NCs, including smart transparent windows, light-sensitive walls and large-area optical detection systems.
Keywords :
II-VI semiconductors; cadmium compounds; electron-hole recombination; nanophotonics; photovoltaic effects; titanium compounds; wide band gap semiconductors; TiO2-CdTe; broadband sensitivity; electron acceptor; electron-hole recombination probability; large-area optical detection systems; large-surface light-sensing devices; light-sensitive walls; photosensing platforms; photosensitive nanocrystal skins; photovoltage sensitivity; sensitivity enhancement; smart transparent windows; wavelength 350 nm to 475 nm; Absorption; Educational institutions; Electron optics; Optical device fabrication; Optical sensors; Sensitivity; Skin;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995295