• DocumentCode
    1779183
  • Title

    Low-temperature Grown Ge1−xSnx layers on a metallic silicide

  • Author

    Kawano, Makoto ; Yamada, Shigeru ; Miyao, Masanobu ; Hamaya, Kohei

  • Author_Institution
    Dept. of Electron., Kyushu Univ., Fukuoka, Japan
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    We have demonstrated epitaxial growth of Ge1-xSnx layers on Fe3Si by low-temperature MBE. We believe that this technique can be applicable to the growth of Ge1-xSnx on various ferromagnetic metallic templates toward high-performance spin-based MOSFETs.
  • Keywords
    ferromagnetic materials; germanium alloys; iron compounds; metallic epitaxial layers; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; tin alloys; Fe3Si; Ge1-xSnx; epitaxial growth; ferromagnetic metallic templates; high-performance spin-based MOSFET; low-temperature MBE; low-temperature grown Ge1-xSnx layers; metallic silicide; Atomic beams; Atomic layer deposition; MOSFET; Molecular beam epitaxial growth; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874632
  • Filename
    6874632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779183