DocumentCode
1779189
Title
N-type SiGe/Ge superlattice structures for terahertz emission
Author
Halpin, John ; Myronov, M. ; Rhead, S. ; Leadley, D.R.
Author_Institution
Dept. of Phys., Univ. of Warwick, Coventry, UK
fYear
2014
fDate
2-4 June 2014
Firstpage
65
Lastpage
66
Abstract
Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.
Keywords
Ge-Si alloys; chemical vapour deposition; elemental semiconductors; germanium; quantum cascade lasers; semiconductor growth; semiconductor superlattices; terahertz wave spectra; RP-CVD; SiGe-Ge; active region; crystal quality; n-type SiGe/Ge superlattice structures; n-type quantum cascade lasers structures; terahertz emission; Quantum cascade lasers; Silicon; Silicon germanium; Substrates; Superlattices; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874635
Filename
6874635
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