Title :
N-type SiGe/Ge superlattice structures for terahertz emission
Author :
Halpin, John ; Myronov, M. ; Rhead, S. ; Leadley, D.R.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.
Keywords :
Ge-Si alloys; chemical vapour deposition; elemental semiconductors; germanium; quantum cascade lasers; semiconductor growth; semiconductor superlattices; terahertz wave spectra; RP-CVD; SiGe-Ge; active region; crystal quality; n-type SiGe/Ge superlattice structures; n-type quantum cascade lasers structures; terahertz emission; Quantum cascade lasers; Silicon; Silicon germanium; Substrates; Superlattices; Surface morphology;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874635
