Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well

Author

Morrison, Cherrelle ; Myronov, M. ; Foronda, J. ; Casteleiro, C. ; Halpin, J.E. ; Rhead, S.D. ; Leadley, D.R.

Author_Institution

Dept. of Phys., Univ. of Warwick, Coventry, UK

fYear

2014

fDate

2-4 June 2014

Firstpage

105

Lastpage

106

Abstract

A high mobility (780,000 cm²/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×10¹¹cm^-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.

Keywords

Hall effect; Shubnikov-de Haas effect; boron; carrier mobility; elemental semiconductors; germanium; internal stresses; magnetoresistance; semiconductor doping; semiconductor quantum wells; two-dimensional electron gas; Ge:B; Hall effect; Shubnikov-de Haas oscillations; carrier density; high mobility two dimensional hole gas; magnetoresistance; modulation doping; multiple frequency oscillatory behavior; parallel conduction; quantum transport; strained Ge quantum well; temperature 0.3 K to 300 K; Decision support systems; Density measurement; Frequency measurement; Oscillators; Substrates; Temperature measurement; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International

Conference_Location

Singapore

Print_ISBN

978-1-4799-5427-8

Type

conf

DOI

10.1109/ISTDM.2014.6874636

Filename

6874636