Title :
Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well
Author :
Morrison, Cherrelle ; Myronov, M. ; Foronda, J. ; Casteleiro, C. ; Halpin, J.E. ; Rhead, S.D. ; Leadley, D.R.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.
Keywords :
Hall effect; Shubnikov-de Haas effect; boron; carrier mobility; elemental semiconductors; germanium; internal stresses; magnetoresistance; semiconductor doping; semiconductor quantum wells; two-dimensional electron gas; Ge:B; Hall effect; Shubnikov-de Haas oscillations; carrier density; high mobility two dimensional hole gas; magnetoresistance; modulation doping; multiple frequency oscillatory behavior; parallel conduction; quantum transport; strained Ge quantum well; temperature 0.3 K to 300 K; Decision support systems; Density measurement; Frequency measurement; Oscillators; Substrates; Temperature measurement; Three-dimensional displays;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874636
