• DocumentCode
    1779192
  • Title

    Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation

  • Author

    Yan Liu ; Jing Yan ; Genquan Han ; Hongjuan Wang ; Mingshan Liu ; Chunfu Zhang ; Buwen Cheng ; Yue Hao

  • Author_Institution
    Key Lab. of Optoelectron. Technol. & Syst. of the Educ. Minist. of China, Chongqing Univ., Chongqing, China
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    107
  • Lastpage
    108
  • Abstract
    We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si2H6 passivation module. High performance Ge0.96Sn0.04 pMOSFETs were fabricated. At a Qmv of 6×1012 cm-2, a 24% enhancement in μeff is demonstrated in Ge0.96Sn0.04 pMOSFETs compared to Ge control.
  • Keywords
    MOSFET; germanium compounds; hole mobility; passivation; silicon compounds; Ge0.96Sn0.04-Si2H6; effective hole mobility; in situ low temperature surface passivation; strained p-channel MOSFET; MOSFET; Passivation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874637
  • Filename
    6874637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779192