DocumentCode :
1779192
Title :
Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation
Author :
Yan Liu ; Jing Yan ; Genquan Han ; Hongjuan Wang ; Mingshan Liu ; Chunfu Zhang ; Buwen Cheng ; Yue Hao
Author_Institution :
Key Lab. of Optoelectron. Technol. & Syst. of the Educ. Minist. of China, Chongqing Univ., Chongqing, China
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
107
Lastpage :
108
Abstract :
We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si2H6 passivation module. High performance Ge0.96Sn0.04 pMOSFETs were fabricated. At a Qmv of 6×1012 cm-2, a 24% enhancement in μeff is demonstrated in Ge0.96Sn0.04 pMOSFETs compared to Ge control.
Keywords :
MOSFET; germanium compounds; hole mobility; passivation; silicon compounds; Ge0.96Sn0.04-Si2H6; effective hole mobility; in situ low temperature surface passivation; strained p-channel MOSFET; MOSFET; Passivation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874637
Filename :
6874637
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779192
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