• DocumentCode
    1779194
  • Title

    Arsenic atomic layer doping in Si using AsH3

  • Author

    Yamamoto, Yusaku ; Kurps, R. ; Murota, Junichi ; Tillack, Bernd

  • Author_Institution
    IHP, Frankfurt (Oder), Germany
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.
  • Keywords
    adsorption; arsenic; doping profiles; elemental semiconductors; secondary ion mass spectra; semiconductor doping; silicon; surface segregation; SIMS; Si(100) surface; Si:As; adsorption; arsenic atomic layer doping; arsenic dosage measurement; arsenic profile measurement; four-point probe; segregation; Adsorption; Ash; Atomic layer deposition; Doping; Process control; Silicon; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874638
  • Filename
    6874638
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779194