DocumentCode
1779195
Title
Analytical model for impact ionization in 3D multiplication regions
Author
El-Howayek, G. ; Milner, B.M. ; Senanayake, P. ; Huffaker, D.L. ; Hayat, M.M.
Author_Institution
Comput. Eng. Dept., Univ. of New Mexico, Albuquerque, NM, USA
fYear
2014
fDate
12-16 Oct. 2014
Firstpage
168
Lastpage
169
Abstract
An analytical model for avalanche process in 3D multiplication regions is presented. Nanowires are distinguished by this phenomenon due their flexibility in forming axial and radial junctions.
Keywords
impact ionisation; nanowires; 3D multiplication regions; avalanche process; impact ionization; nanowires; Analytical models; Educational institutions; Gallium arsenide; Noise; Three-dimensional displays; Trajectory; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2014 IEEE
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/IPCon.2014.6995301
Filename
6995301
Link To Document