• DocumentCode
    1779197
  • Title

    Low breakdown voltage CMOS compatible p-n junction avalanche photodiode

  • Author

    Hossain, M. Mottaleb ; Zarkesh-Ha, Payman ; David, John P. R. ; Hayat, Majeed M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2014
  • fDate
    12-16 Oct. 2014
  • Firstpage
    170
  • Lastpage
    171
  • Abstract
    Breakdown voltage, mean gain and excess noise factor of CMOS-compatible p-n junction silicon avalanche photodiodes are predicted using the dead space multiplication theory. Measured dark current and breakdown voltages are also reported supporting low-voltage operation.
  • Keywords
    CMOS integrated circuits; avalanche photodiodes; dark conductivity; low-power electronics; p-n junctions; semiconductor device breakdown; CMOS compatible p-n junction avalanche photodiode; Si; breakdown voltage; dark current; dead space multiplication theory; excess noise; low-voltage operation; mean gain; Avalanche photodiodes; CMOS integrated circuits; Dark current; Doping; Electric breakdown; Noise; Silicon; CMOS; avalanche photodiodes; breakdown; dead space; silicon; smart lighting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/IPCon.2014.6995302
  • Filename
    6995302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779197