Title :
Enhanced photoluminescence from Ge/SiGe quantum wells by epitaxial growth induced strain
Author :
Xiaochi Chen ; Yijie Huo ; Fei, Edward T. ; Ching-Ying Lu ; Kai Zang ; Muyu Xue ; Kamins, Theodore I. ; Harris, James S.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We demonstrate enhanced photoluminescence from Ge/SiGe quantum wells with strain from -0.28% (compressive) to 0.25% (tensile) achieved by epitaxial growth techniques. The intensity enhancement and peak shift from photoluminescence measurements are in agreement with theoretical calculations.
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; internal stresses; photoluminescence; semiconductor epitaxial layers; semiconductor materials; semiconductor quantum wells; vapour phase epitaxial growth; Ge-SiGe; Ge/SiGe quantum wells; compressive strain; enhanced photoluminescence; epitaxial growth induced strain; intensity enhancement; peak shift; tensile strain; Buffer layers; Epitaxial growth; Laser excitation; Photoluminescence; Silicon; Silicon germanium; Strain;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995309
