• DocumentCode
    1779206
  • Title

    Enhanced photoluminescence from Ge/SiGe quantum wells by epitaxial growth induced strain

  • Author

    Xiaochi Chen ; Yijie Huo ; Fei, Edward T. ; Ching-Ying Lu ; Kai Zang ; Muyu Xue ; Kamins, Theodore I. ; Harris, James S.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2014
  • fDate
    12-16 Oct. 2014
  • Firstpage
    184
  • Lastpage
    185
  • Abstract
    We demonstrate enhanced photoluminescence from Ge/SiGe quantum wells with strain from -0.28% (compressive) to 0.25% (tensile) achieved by epitaxial growth techniques. The intensity enhancement and peak shift from photoluminescence measurements are in agreement with theoretical calculations.
  • Keywords
    Ge-Si alloys; elemental semiconductors; germanium; internal stresses; photoluminescence; semiconductor epitaxial layers; semiconductor materials; semiconductor quantum wells; vapour phase epitaxial growth; Ge-SiGe; Ge/SiGe quantum wells; compressive strain; enhanced photoluminescence; epitaxial growth induced strain; intensity enhancement; peak shift; tensile strain; Buffer layers; Epitaxial growth; Laser excitation; Photoluminescence; Silicon; Silicon germanium; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/IPCon.2014.6995309
  • Filename
    6995309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779206