III-V on-silicon sources for optical interconnect applications

Author

Van Thourhout, D. ; Keyvaninia, S. ; Tassaert, M. ; Spuesens, T. ; Roelkens, G. ; Tian, B. ; Wang, Z. ; Pantouvaki, M. ; Van Campenhout, J. ; Merckling, C.

Author_Institution

Photonics Res. Group, Ghent Univ., Ghent, Belgium

fYear

2014

fDate

12-16 Oct. 2014

Firstpage

186

Lastpage

187

Abstract

Optical interconnects require efficient and flexible optical sources. This paper presents results on two technology platforms being developed for realizing these. Integration using wafer bonding technologies is well established now and the focus is on new device types including tunable lasers, multi-wavelength lasers and switching. As an alternative, we also started work on monolithic integration using heteroepitaxy directly on silicon. We here report recent results on low threshold nanowire lasers.

Keywords

III-V semiconductors; elemental semiconductors; integrated optics; laser tuning; optical interconnections; optical switches; semiconductor epitaxial layers; semiconductor lasers; silicon; wafer bonding; III-V on-silicon sources; Si; heteroepitaxy; monolithic integration; multiwavelength lasers; optical interconnect applications; switching; tunable lasers; wafer bonding; Indium phosphide; Lasers; Optical amplifiers; Optical interconnections; Optical switches; Optimized production technology; Silicon; III-V on silicon; hetero-epitaxy; integratd optics; silicon photonics; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2014 IEEE

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/IPCon.2014.6995310

Filename

6995310