Title :
III-V on-silicon sources for optical interconnect applications
Author :
Van Thourhout, D. ; Keyvaninia, S. ; Tassaert, M. ; Spuesens, T. ; Roelkens, G. ; Tian, B. ; Wang, Z. ; Pantouvaki, M. ; Van Campenhout, J. ; Merckling, C.
Author_Institution :
Photonics Res. Group, Ghent Univ., Ghent, Belgium
Abstract :
Optical interconnects require efficient and flexible optical sources. This paper presents results on two technology platforms being developed for realizing these. Integration using wafer bonding technologies is well established now and the focus is on new device types including tunable lasers, multi-wavelength lasers and switching. As an alternative, we also started work on monolithic integration using heteroepitaxy directly on silicon. We here report recent results on low threshold nanowire lasers.
Keywords :
III-V semiconductors; elemental semiconductors; integrated optics; laser tuning; optical interconnections; optical switches; semiconductor epitaxial layers; semiconductor lasers; silicon; wafer bonding; III-V on-silicon sources; Si; heteroepitaxy; monolithic integration; multiwavelength lasers; optical interconnect applications; switching; tunable lasers; wafer bonding; Indium phosphide; Lasers; Optical amplifiers; Optical interconnections; Optical switches; Optimized production technology; Silicon; III-V on silicon; hetero-epitaxy; integratd optics; silicon photonics; wafer bonding;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995310
