• DocumentCode
    1779212
  • Title

    Impact of stressors in future SiGe-based FinFETs: Mobility boost and scalability

  • Author

    Eneman, Geert ; Brunco, D.P. ; Witters, L. ; Mitard, J. ; Hikavyy, Andriy ; De Keersgieter, An ; Roussel, P.J. ; Loo, Roger ; Veloso, A. ; Horiguchi, Naoto ; Collaert, Nadine ; Thean, A.

  • Author_Institution
    Imec, Heverlee, Belgium
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    9
  • Lastpage
    10
  • Abstract
    S/D epitaxial layers and SRBs are the most effective stressors in scaled FinFETs. While S/D stressors are well established, for SRBs the remaining technical difficulties are significant. However, its expected performance boost and enhanced scalability makes developing SRBs worthwhile, especially when combined with alternative channel materials.
  • Keywords
    Ge-Si alloys; MOSFET; semiconductor materials; S-D epitaxial layers; SiGe; channel material; mobility boost; scalability enhancement; silicon-germanium-based FinFET; stressor impact; FinFETs; Logic gates; Silicon; Silicon germanium; Stress; Substrates; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874646
  • Filename
    6874646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779212