• DocumentCode
    1779213
  • Title

    Spin accumulation in n-Ge on Si with sputtered Mn5Ge3C0.8-contacts

  • Author

    Fischer, Inga Anita ; Li-Te Chang ; Surgers, Christoph ; Chiussi, S. ; Wang, K.L. ; Schulze, J.

  • Author_Institution
    Inst. fur Halbleitertech., Univ. Stuttgart, Stuttgart, Germany
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    113
  • Lastpage
    114
  • Abstract
    We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.
  • Keywords
    carbon; elemental semiconductors; germanium; germanium alloys; manganese alloys; semiconductor-metal boundaries; silicon; spin polarised transport; sputtered coatings; CMOS-compatible fabrication process; Ge-Si; Mn5Ge3C0.8; Si(111) substrate; degenerately doped n-Ge layers; electrical injection; spin accumulation; spin injection; spin-polarized electrons; sputtered Mn5Ge3C0.8-contacts; Aluminum oxide; Contacts; Doping; Fabrication; Plasma temperature; Spin polarized transport; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874647
  • Filename
    6874647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779213