Title :
Spin accumulation in n-Ge on Si with sputtered Mn5Ge3C0.8-contacts
Author :
Fischer, Inga Anita ; Li-Te Chang ; Surgers, Christoph ; Chiussi, S. ; Wang, K.L. ; Schulze, J.
Author_Institution :
Inst. fur Halbleitertech., Univ. Stuttgart, Stuttgart, Germany
Abstract :
We demonstrate electrical injection of spin-polarized electrons from sputtered Mn5Ge3C0.8 contacts into degenerately doped n-Ge layers on Si as an important step towards integrating spin injection into Ge channels into a CMOS-compatible fabrication process.
Keywords :
carbon; elemental semiconductors; germanium; germanium alloys; manganese alloys; semiconductor-metal boundaries; silicon; spin polarised transport; sputtered coatings; CMOS-compatible fabrication process; Ge-Si; Mn5Ge3C0.8; Si(111) substrate; degenerately doped n-Ge layers; electrical injection; spin accumulation; spin injection; spin-polarized electrons; sputtered Mn5Ge3C0.8-contacts; Aluminum oxide; Contacts; Doping; Fabrication; Plasma temperature; Spin polarized transport; Temperature measurement;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874647
