Title :
Atomically controlled heteroepitaxy of Ge on a ferromagnetic heusler alloy for a vertical-type spin transistor
Author :
Yamada, Shigeru ; Miyao, Masanobu ; Hamaya, Kohei
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka, Japan
Abstract :
Using molecular beam epitaxy (MBE) techniques, we developed a growth technique of epitaxial Ge layers on a ferromagnetic alloy, Fe3Si. As a result, we demonstrated a basic structure of a vertical-type Ge-channel spin transistor on a Si platform.
Keywords :
MOSFET; elemental semiconductors; germanium; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; thin film transistors; Fe3Si; Ge; MBE; atomically controlled heteroepitaxy; epitaxial layers; ferromagnetic Heusler alloy; molecular beam epitaxy; vertical-type Ge-channel spin transistor; Atomic layer deposition; Epitaxial growth; Iron; Silicon; Transistors;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874656
