• DocumentCode
    1779226
  • Title

    Atomically controlled heteroepitaxy of Ge on a ferromagnetic heusler alloy for a vertical-type spin transistor

  • Author

    Yamada, Shigeru ; Miyao, Masanobu ; Hamaya, Kohei

  • Author_Institution
    Dept. of Electron., Kyushu Univ., Fukuoka, Japan
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    Using molecular beam epitaxy (MBE) techniques, we developed a growth technique of epitaxial Ge layers on a ferromagnetic alloy, Fe3Si. As a result, we demonstrated a basic structure of a vertical-type Ge-channel spin transistor on a Si platform.
  • Keywords
    MOSFET; elemental semiconductors; germanium; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; thin film transistors; Fe3Si; Ge; MBE; atomically controlled heteroepitaxy; epitaxial layers; ferromagnetic Heusler alloy; molecular beam epitaxy; vertical-type Ge-channel spin transistor; Atomic layer deposition; Epitaxial growth; Iron; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874656
  • Filename
    6874656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779226