Migration enhanced epitaxy of InGaP on offcut Ge (001) using solid-source molecular beam epitaxy

Author

Wan Khai Loke ; Qian Zhou ; Xiao Gong ; Owen, Man Hon Samuel ; Wicaksono, Satrio ; Kian Hua Tan ; Yee-Chia Yeo ; Soon Fatt Yoon

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2014

fDate

2-4 June 2014

Firstpage

75

Lastpage

76

Abstract

MEE growth of InGaP on a (001) oriented Ge surface with 10° offcut on GeOI substrate was presented. TEM inspection shows good crystalline quality of InGaP material on Ge surface. Further study is required to further optimize the MEE-InGaP process for defect-free InGaP/Ge interface and subsequent epilayers.

Keywords

III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; (001) oriented Ge surface; Ge; GeOI substrate; InGaP; TEM; crystalline quality; defect-free InGaP-Ge interface; epilayers; migration enhanced epitaxy; offcut Ge (001) surface; solid-source molecular beam epitaxy; Atomic layer deposition; Educational institutions; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International

Conference_Location

Singapore

Print_ISBN

978-1-4799-5427-8

Type

conf

DOI

10.1109/ISTDM.2014.6874658

Filename

6874658