• DocumentCode
    1779232
  • Title

    Germanium lasers for the near and mid IR

  • Author

    Michel, J. ; Yan Cai ; Zhaohong Han ; Lin Zhang ; Wei Yu ; Kimerling, Lionel C.

  • Author_Institution
    Microphotonics Center, MIT, Cambridge, MA, USA
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    Ge lasers, monolithically integrated on a Si CMOS platform, offer great potential for future on-chip photonic systems. In addition, the wide gain spectrum opens the possibility for inexpensive tunable lasers in the near- and mid-IR.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; germanium; semiconductor lasers; silicon; Ge-Si; Si CMOS platform; germanium lasers; on-chip photonic systems; Decision support systems; Electronic mail; Germanium; Lasers; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874659
  • Filename
    6874659
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779232