• DocumentCode
    1779237
  • Title

    Observation of in situ B-doped Epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

  • Author

    Byongju Kim ; Hyunchul Jang ; Dae-Seop Byeon ; Sangmo Koo ; Dae-Hong Ko

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.
  • Keywords
    MIS devices; boron; chemical vapour deposition; elemental semiconductors; germanium; semiconductor epitaxial layers; semiconductor growth; surface morphology; (111) terrace structures; Ge:B-Si; Si; Si(111) substrate; in situ boron-doped epitaxial germanium layer growth; metal oxide semiconductor devices; pMOS devices; surface morphology evolution; ultrahigh vacuum chemical vapor deposition; Epitaxial growth; Scanning electron microscopy; Silicon; Substrates; Surface morphology; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874662
  • Filename
    6874662
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779237