Title :
Growth and crystalline properties of Ge1−x−ySnxCy ternary alloy thin films on Ge(001) substrate
Author :
Terasawa, K. ; Yamaha, Takashi ; Kurosawa, Masashi ; Takeuchi, Wataru ; Taoka, Noriyuki ; Nakatsuka, Osamu ; Kamiyama, E. ; Matsutani, R. ; Suwa, R. ; Kashima, Kenji ; Izunome, K. ; Sueoka, Kazuhisa ; Zaima, Shigeaki
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
We achieved the world´s first epitaxial growth of a Ge1-x-ySnxCy layer, and investigated the effect of Sn incorporation on the growth of Ge1-xCx. Sn incorporation can decrease the epitaxial temperature of Ge1-xCx layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge1-x-ySnxCy layer is expected to realize the energy band engineering independently on the lattice parameter and promises to extend the potential of group-IV semiconductor materials for nanoelectronics and optoelectronic applications.
Keywords :
crystal structure; germanium compounds; lattice constants; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; sputter deposition; tin compounds; Ge; Ge(001) substrate; Ge1-x-ySnxCy; crystalline properties; energy band engineering; epitaxial growth; epitaxial temperature; group IV semiconductor materials; lattice parameter; nanoelectronics applications; optoelectronic applications; ternary alloy thin films; Decision support systems; Tin;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874666
