Germanium for photonic applications

Author

Gardes, Frederic Y. ; Littlejohns, Callum G. ; Soler Penades, Jordi ; Mitchell, Colin J. ; Khokhar, Ali Z. ; Reed, Graham T. ; Mashanovich, Goran Z.

Author_Institution

Optoelectron. Res. Centre, Univ. of Southampton, Southampton, UK

fYear

2014

fDate

2-4 June 2014

Firstpage

139

Lastpage

140

Abstract

Localized GOI wires have been grown using a LPE process resulting in single crystal layers up to 400 urn in length and 5 urn in width. We have reported on the design, fabrication and characterisation of a 4-channel AMMI structure integrated with germanium p-i-n photodetectors to form a silicon photonics receiver. Light detection at 50 Gb/s has been demonstrated with a low dark current of <; 20 nA at -1 V bias. The AMMI structure exhibits a low insertion loss of <; -0.5 dB and cross-talk of <; -15 dB across the 4 channels.

Keywords

elemental semiconductors; germanium; liquid phase epitaxial growth; optical receivers; photodetectors; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; 4-channel AMMI structure; Ge; LPE process; bit rate 50 Gbit/s; cross-talk; crystalline germanium on insulator; dark current; germanium p-i-n photodetectors; insertion loss; light detection; liquid phase epitaxy; localized GOI wires; photonic applications; silicon photonics receiver; single angled multimode interferometer; voltage -1 V; Decision support systems; Detectors; Germanium; Silicon; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International

Conference_Location

Singapore

Print_ISBN

978-1-4799-5427-8

Type

conf

DOI

10.1109/ISTDM.2014.6874667

Filename

6874667