Title :
Growth of tensile-strained Ge layer and highly strain-relaxed Ge1−xSnx buffer layer on silicon by molecular beam epitaxy
Author :
Wei Wang ; Eng Soon Tok ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
Highly strain-relaxed Ge1-xSnx layers were grown directly on Si(100) by MBE firstly. XRD and AFM measurements demonstrate a good crystalline quality and a relatively flat surface. Ge with 0.82% tensile strain were grown on the Ge0.895Sn0.105/Si, and the tensile-strain value decreases with increasing thickness of Ge epilayers.
Keywords :
X-ray diffraction; atomic force microscopy; buffer layers; elemental semiconductors; germanium; germanium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; tensile strength; AFM; Ge-Ge1-xSnx-Si; Si; Si(100) substrate; XRD; crystalline quality; epilayer thickness; highly strain-relaxed buffer layer; molecular beam epitaxy; tensile-strained layer; Buffer layers; Lattices; Silicon; Tensile strain; Tin; X-ray scattering;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874669
