• DocumentCode
    1779257
  • Title

    Resonant photoluminescence from Ge microdisks on Ge-on-insulator

  • Author

    Xuejun Xu ; Nishida, Keisuke ; Sawano, Kentarou ; Maruizumi, Takuya ; Shiraki, Yasuhiro

  • Author_Institution
    Adv. Res. Labs., Tokyo City Univ., Tokyo, Japan
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    135
  • Lastpage
    136
  • Abstract
    Well-resolved resonant PL peaks were observed from microdisks fabricated on heavily n-doped GOI. FSR and Q-factor confirmed that these peaks corresponded to the WGMs of microdisk. Q-factors didn´t decrease against pump power, indicating the onset of population inversion. Our results show that GOI is a promising platform to realize lasers.
  • Keywords
    Q-factor; elemental semiconductors; germanium; integrated optics; micro-optomechanical devices; microcavities; microdisc lasers; micromechanical resonators; optical pumping; photoluminescence; population inversion; whispering gallery modes; Ge-Si; Ge-SiO2; Q-factor; Si; free-spectrum range; microdisk resonators; population inversion; pump power; tensile-strained heavily n-doped Ge-on-insulator; well-resolved resonant photoluminescence; whispering gallery modes; Absorption; Integrated optics; Optical device fabrication; Optical resonators; Q-factor; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874670
  • Filename
    6874670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779257