• DocumentCode
    1779259
  • Title

    Strain-induced morphological instability and self assembly of tin wires during controlled annealing of Ge0.83Sn0.17 epitaxial film on Ge(001) substrate

  • Author

    Lingzi Li ; Wei Wang ; Eng Soon Tok ; Yee-Chia Yeo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    Formation of Sn wires on Ge0.83Sn0.17 layer during annealing was discovered. The phenomenon observed may be explained by surface undulation, Sn segregation and aggregation.
  • Keywords
    aggregation; annealing; germanium alloys; molecular beam epitaxial growth; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; surface morphology; surface segregation; tin alloys; Ge; Ge(001) Substrate; Ge0.83Sn0.17; aggregation; annealing; epitaxial film; self-assembly; strain-induced morphological instability; surface segregation; surface undulation; tin wires; Decision support systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874671
  • Filename
    6874671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779259