• DocumentCode
    1779264
  • Title

    Strained Ge FinFET structures fabricated by selective epitaxial growth

  • Author

    Loo, Roger ; Sun, Jian ; Witters, L. ; Hikavyy, Andriy ; Vincent, B. ; Shimura, Y. ; Favia, Paola ; Richard, O. ; Bender, Hugo ; Vandervorst, W. ; Collaert, Nadine ; Thean, A.

  • Author_Institution
    Kapeldreef 75, Imec, Leuven, Belgium
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si1-xGex surfaces.
  • Keywords
    MOSFET; elemental semiconductors; epitaxial growth; germanium; semiconductor epitaxial layers; Ge; one-growth step fabrication scheme; pre-epi oxide removal; selective epitaxial growth; strained Ge FinFET structures; Epitaxial growth; Optimization; Rough surfaces; Silicon; Silicon germanium; Surface morphology; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874674
  • Filename
    6874674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779264