DocumentCode :
1779264
Title :
Strained Ge FinFET structures fabricated by selective epitaxial growth
Author :
Loo, Roger ; Sun, Jian ; Witters, L. ; Hikavyy, Andriy ; Vincent, B. ; Shimura, Y. ; Favia, Paola ; Richard, O. ; Bender, Hugo ; Vandervorst, W. ; Collaert, Nadine ; Thean, A.
Author_Institution :
Kapeldreef 75, Imec, Leuven, Belgium
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
19
Lastpage :
20
Abstract :
A one-growth step fabrication scheme for strained Ge FinFET structures has been successfully developed and implemented in a device fabrication scheme. From device point of view, the concept including two growth steps might be even more favorable. However, it requires an improvement of the pre-epi oxide removal from Si1-xGex surfaces.
Keywords :
MOSFET; elemental semiconductors; epitaxial growth; germanium; semiconductor epitaxial layers; Ge; one-growth step fabrication scheme; pre-epi oxide removal; selective epitaxial growth; strained Ge FinFET structures; Epitaxial growth; Optimization; Rough surfaces; Silicon; Silicon germanium; Surface morphology; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874674
Filename :
6874674
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779264
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