DocumentCode
1779278
Title
Broadband III-V on silicon hybrid superluminescent LEDs by quantum well intermixing and multiple die bonding
Author
De Groote, A. ; Peters, J.D. ; Davenport, M.L. ; Heck, M.J.R. ; Baets, R. ; Roelkens, G. ; Bowers, J.E.
Author_Institution
ECE Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
fYear
2014
fDate
12-16 Oct. 2014
Firstpage
260
Lastpage
261
Abstract
Combining quantum well intermixing and multiple die bonding a broadband superluminescent III-V on silicon LED was realized. Balancing four LEDs with different band gaps resulted in 292nm 3dB bandwidth and an on-chip power of -8dBm.
Keywords
III-V semiconductors; elemental semiconductors; indium compounds; microassembling; semiconductor quantum wells; silicon; superluminescent diodes; Si-InP; band gaps; broadband III-V on silicon hybrid superluminescent LED; multiple die bonding; on-chip power; quantum well intermixing; Absorption; Bandwidth; Broadband communication; Light emitting diodes; Optical waveguides; Photonic band gap; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2014 IEEE
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/IPCon.2014.6995345
Filename
6995345
Link To Document