DocumentCode
1779281
Title
Impact of crystalline structure on electrical property of NiGe/Ge contact
Author
Yunsheng Deng ; Nakatsuka, Osamu ; Taoka, Noriyuki ; Zaima, Shigeaki
Author_Institution
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
fYear
2014
fDate
2-4 June 2014
Firstpage
85
Lastpage
86
Abstract
We can control the crystalline structure of NiGe layer on Ge(110) by controlling the deposition method, surface cleaning, and annealing temperature. We also investigated the impact of the interface crystalline structures on the electrical properties of NiGe/Ge(110) contacts. We found that thermal cleaning of Ge surface improves on the interfacial structure of the epitaxial NiGe/Ge(110) contact, that leads to lowering SBH.
Keywords
annealing; crystal structure; elemental semiconductors; germanium; germanium alloys; interface structure; metallic epitaxial layers; nickel alloys; semiconductor-metal boundaries; surface cleaning; vacuum deposition; Ge; Ge(110) surface; NiGe-Ge; annealing; crystalline structure; electrical property; epitaxial contact; interfacial structure; surface cleaning; thermal cleaning; Cleaning; Educational institutions; Electronic mail; Facsimile; Grain boundaries; Lattices; Nickel;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location
Singapore
Print_ISBN
978-1-4799-5427-8
Type
conf
DOI
10.1109/ISTDM.2014.6874682
Filename
6874682
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