Title :
Effect of Sn-doped Ge insertion layers on epitaxial growth of ferromagnetic Fe3Si films on a flexible substrate
Author :
Higashi, Hiroshi ; Fujita, Yoshikazu ; Kawano, Makoto ; Hirayama, Junya ; Yamada, Shigeru ; Jong-Hyeok Park ; Sadoh, T. ; Miyao, Masanobu ; Hamaya, Kohei
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka, Japan
Abstract :
By an insertion of a Ge(Sn) layer and its CMP treatments, we have improved the crystalline and magnetic characteristics of one of the Heusler-compounds, Fe3Si, on (111)-oriented Ge on a flexible substrate. This work is a first step of high-performance flexible spintronics for flexible system-in-display devices.
Keywords :
chemical mechanical polishing; elemental semiconductors; germanium; iron alloys; magnetic epitaxial layers; metallic thin films; molecular beam epitaxial growth; silicon alloys; tin; 111)-oriented Ge; CMP; Fe3Si; Ge:Sn; Heusler-compounds; Sn-doped Ge insertion layers; epitaxial growth; ferromagnetic films; flexible substrate; flexible system-in-display devices; Compounds; Epitaxial growth; Magnetoelectronics; Polyimides; Substrates; Temperature measurement;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874683
