Optimization of ISBD embedded SiGe layers to prevent delamination process for MOSFET applications

Author

Wasyluk, Joanna ; Yang Ge ; Wurster, Kai ; Lenski, Markus ; Reichel, Christian

Author_Institution

GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Dresden, Germany

fYear

2014

fDate

2-4 June 2014

Firstpage

49

Lastpage

50

Abstract

Embedded strained SiGe (eSiGe) layers applied for source/drain applications enhance hole mobility of the transistor by inducing uniaxial compressive strain into Si-channel [1, 2], One of the common SiGe techniques used for source/drain (S/D) formation is in situ boron doped (ISBD) SiGe epitaxy. It is well known that ISBD eSiGe S/D device exhibits higher drive current than a boron-implanted eSiGe S/D device due to the fact that almost all B atoms locate into substitutional sites of SiGe lattice structure.

Keywords

Ge-Si alloys; MOSFET; delamination; hole mobility; semiconductor materials; B atoms; ISBD-embedded silicon-germanium layers; MOSFET application; S-D formation; SiGe; boron-implanted embedded strained silicon-germanium S-D device; delamination process prevention; drive current; embedded strained silicon-germanium layers; hole mobility; in situ boron-doped silicon-germanium epitaxy; silicon channel; silicon-germanium lattice structure; silicon-germanium technique; source-drain application; uniaxial compressive strain; Atomic layer deposition; Boron; Delamination; Plasma temperature; Strips; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International

Conference_Location

Singapore

Print_ISBN

978-1-4799-5427-8

Type

conf

DOI

10.1109/ISTDM.2014.6874689

Filename

6874689