Title :
Si-Ge-Sn heterostructures: Growth and applications
Author :
Buca, Dan ; Wirths, Stephan ; Stange, Daniela ; Tiedemann, Andreas T. ; Mussler, Gregor ; Ikonic, Zoran ; Chiussi, S. ; Hartmann, J.M. ; Grutzmacher, D. ; Mantl, Siegfried
Author_Institution :
Peter Grunberg Inst. 9 & JARA - FIT, Forschungszentrum Juelich, Grunberg, Germany
Abstract :
This study presents the synthesis of a SiGeSn buffer layer by reduced pressure CVD method. Band structure calculation and transmission electron microscopy are used for material characterization. The use of this heterostructure for MOSFET and MOS capacitor fabrication is also addressed.
Keywords :
Ge-Si alloys; MOS capacitors; MOSFET; band structure; buffer layers; chemical vapour deposition; semiconductor growth; semiconductor heterojunctions; semiconductor materials; semiconductor thin films; tin alloys; transmission electron microscopy; MOS capacitor; MOSFET; SiGeSn; band structure; buffer layer; heterostructures; reduced pressure CVD; transmission electron microscopy; Decision support systems;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874691
