Novel Si-Ge-C superlattices and their applications

With the Si-Ge-C SLs described in this paper, the bandgap nature (indirect/direct) and magnitude, as well as the band offsets relative to Si, can be varied significantly across the entire infra-red spectrum, depending on the SL composition and periodicity, and also on surface orientation. Devices that until now have required compound semiconductors are now possible to implement with Si-Ge-C SLs, which are compatible with standard CMOS processing.