• DocumentCode
    1779303
  • Title

    Crystal growth of Sn-related group-IV alloy thin films for advanced Si nanoelectronics

  • Author

    Zaima, Shigeaki ; Nakatsuka, Osamu ; Taoka, Noriyuki ; Kurosawa, Masashi ; Asano, Takashi ; Yamaha, Takashi ; Takeuchi, Wataru

  • Author_Institution
    Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
  • fYear
    2014
  • fDate
    2-4 June 2014
  • Firstpage
    155
  • Lastpage
    156
  • Abstract
    The incorporation of Sn into Ge and Si1-xGex effectively improves on the crystalline and electronic properties. Also, Sn-related group-IV materials give us new features of energy band engineering. The development of crystal growth of Sn-related alloys is essential for extending applications of future Si nanoelectronics.
  • Keywords
    Ge-Si alloys; band structure; crystal growth; elemental semiconductors; germanium; semiconductor growth; semiconductor materials; tin; Ge:Sn; Si1-xGex:Sn; Sn-related group-IV alloy thin films; crystal growth; crystalline properties; electronic properties; energy band engineering; nanoelectronics; Decision support systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-5427-8
  • Type

    conf

  • DOI
    10.1109/ISTDM.2014.6874694
  • Filename
    6874694
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779303