DocumentCode :
1779303
Title :
Crystal growth of Sn-related group-IV alloy thin films for advanced Si nanoelectronics
Author :
Zaima, Shigeaki ; Nakatsuka, Osamu ; Taoka, Noriyuki ; Kurosawa, Masashi ; Asano, Takashi ; Yamaha, Takashi ; Takeuchi, Wataru
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
fYear :
2014
fDate :
2-4 June 2014
Firstpage :
155
Lastpage :
156
Abstract :
The incorporation of Sn into Ge and Si1-xGex effectively improves on the crystalline and electronic properties. Also, Sn-related group-IV materials give us new features of energy band engineering. The development of crystal growth of Sn-related alloys is essential for extending applications of future Si nanoelectronics.
Keywords :
Ge-Si alloys; band structure; crystal growth; elemental semiconductors; germanium; semiconductor growth; semiconductor materials; tin; Ge:Sn; Si1-xGex:Sn; Sn-related group-IV alloy thin films; crystal growth; crystalline properties; electronic properties; energy band engineering; nanoelectronics; Decision support systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
Type :
conf
DOI :
10.1109/ISTDM.2014.6874694
Filename :
6874694
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779303
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