Title :
Epitaxy of light emitting SiGeSn materials using novel precursors
Author :
Kouvetakis, J. ; Menendez, J.
Author_Institution :
Dept. of Chem. & Biochem., Arizona State Univ., Tempe, AZ, USA
Abstract :
Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. In this presentation we review synthesis, optical properties and preliminary device studies of crystalline Ge1-ySny and Ge1-X-ySiiSny alloys developed at ASU.
Keywords :
Ge-Si alloys; chemical vapour deposition; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; tin alloys; SiGeSn; crystalline alloys; epitaxy; light emitting materials; optical properties; preliminary device studies; synthesis; Nonlinear optics; Physics; Silicon; Solids; Tin;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874700
