Title :
Observation of suppressed dark current of Ge on Si (100) using ultrathin Ge seed layer
Author :
Okumura, Susumu ; Simoyama, Takasi ; Ono, H. ; Okuno, Masayuki ; Miura, Masaki ; Fujikata, J. ; Noguchi, M. ; Mogami, Tohru ; Horikawa, Tsuyoshi ; Tanaka, Yuichi ; Morito, Ken
Author_Institution :
Photonics Electron. Technol. Res. Assoc., Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
In this study, we investigated the effect of the Ge LT layer thickness in HT/LT 2-step Ge growth on the I-V characteristics. Even the ultrathin 5-nm-thick LT layer could lower the dark current caused by the defects due to the effective defect termination between Ge/Si interfaces.
Keywords :
chemical vapour deposition; dark conductivity; elemental semiconductors; germanium; semiconductor growth; semiconductor thin films; Ge-Si; I-V characteristics; Si; Si (100) substrate; high temperature-low temperature 2-step Ge growth; low temperature layer thickness; suppressed dark current; ultrathin germanium seed layer; Annealing; Chemical vapor deposition; Decision support systems; Gases; Silicon; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-5427-8
DOI :
10.1109/ISTDM.2014.6874701
