• DocumentCode
    1779360
  • Title

    Room temperature high-gain InAs/AlAsSb avalanche photodiode

  • Author

    Wenlu Sun ; Maddox, Scott J. ; Bank, Seth R. ; Campbell, Joe C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • fYear
    2014
  • fDate
    12-16 Oct. 2014
  • Firstpage
    350
  • Lastpage
    351
  • Abstract
    We report InAs/AlAsSb avalanche photodiodes with depletion regions as thick as 8 μm and room temperature gain ~ 300.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; InAs-AlAsSb; avalanche photodiode; depletion regions; room temperature gain; temperature 293 K to 298 K; Avalanche photodiodes; Current measurement; Dark current; Doping; Gain measurement; Noise; Temperature measurement; InAs; avalanche photodiode; multiplication gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2014 IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/IPCon.2014.6995392
  • Filename
    6995392
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1779360