Title :
Room temperature high-gain InAs/AlAsSb avalanche photodiode
Author :
Wenlu Sun ; Maddox, Scott J. ; Bank, Seth R. ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report InAs/AlAsSb avalanche photodiodes with depletion regions as thick as 8 μm and room temperature gain ~ 300.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; InAs-AlAsSb; avalanche photodiode; depletion regions; room temperature gain; temperature 293 K to 298 K; Avalanche photodiodes; Current measurement; Dark current; Doping; Gain measurement; Noise; Temperature measurement; InAs; avalanche photodiode; multiplication gain;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995392
