DocumentCode
1779363
Title
Planar InAs p-i-n photodiodes fabricated using ion implantation
Author
White, Benjamin S. ; Sandall, Ian ; Chee Hing Tan
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2014
fDate
12-16 Oct. 2014
Firstpage
352
Lastpage
353
Abstract
We present a process for fabricating Planar InAs APDs through Be implantation. Fabrication details are discussed in addition to current-voltage, responsivity and gain measurements taken from the diodes.
Keywords
beryllium; indium compounds; ion implantation; p-i-n photodiodes; semiconductor doping; Be implantation; InAs:Be; current-voltage measurement; gain measurements; ion implantation; planar InAs p-i-n photodiodes; responsivity; Annealing; Dark current; Implants; Ion implantation; Photodiodes; Semiconductor diodes; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2014 IEEE
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/IPCon.2014.6995393
Filename
6995393
Link To Document