Title :
InAsBi photodiode operating in the MWIR
Author :
Sandall, Ian C. ; Bastiman, Faebian ; White, Ben ; Richards, Robert ; David, John ; Chee Hing Tan
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
We present results demonstrating an InAsBi photodiode with a photo response beyond 3.6 μm. We observe photocurrent from the diode up to temperatures of 225 K with a dark current density of 2.6 Acm-2.
Keywords :
III-V semiconductors; current density; indium compounds; infrared spectra; photoconductivity; photodiodes; photoemission; InAsBi; InAsBi photodiode; MWIR operation; dark current density; diode photocurrent; photo response; Bismuth; Current measurement; Dark current; Fabrication; Photodiodes; Temperature dependence; Temperature measurement;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995395
