DocumentCode :
1779369
Title :
Enhanced responsivity by integration of interdigitated electrodes on Ge0.93Sn0.07 infrared photodetectors
Author :
Pham, Thach ; Conley, Benjamin R. ; Liang Huang ; Wei Du ; Ghetmiri, Seyed Amir ; Mosleh, Aboozar ; Nazzal, Amjad ; Soref, Richard A. ; Sun, Greg ; Margetis, Joe ; Tolle, John ; Naseem, Hameed A. ; Shui-Qing Yu
Author_Institution :
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
fYear :
2014
fDate :
12-16 Oct. 2014
Firstpage :
358
Lastpage :
359
Abstract :
The interdigitated electrodes were integrated on Ge0.93Sn0.07/Ge heterostructure photoconductive detectors. Photoresponse extending to 2.2 μm was achieved, and the enhanced responsivity with reduced spacing between interdigitated electrodes was observed at room temperature.
Keywords :
electrodes; elemental semiconductors; germanium; germanium alloys; infrared detectors; photodetectors; tin alloys; Ge0.93Sn0.07-Ge; enhanced responsivity; heterostructure photoconductive detectors; infrared photodetectors; interdigitated electrodes; photoresponse; reduced spacing; temperature 293 K to 298 K; Educational institutions; Electrodes; Photoconducting materials; Photodetectors; Photonics; Silicon; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/IPCon.2014.6995396
Filename :
6995396
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1779369
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