New type of high power pulse semiconductor laser based on epitaxially-integrated AlGaAs/GaAs thyristor heterostructure

Author

Slipchenko, S.O. ; Podoskin, A.A. ; Rozhkov, A.V. ; Vasileva, V.V. ; Pikhtin, N.A. ; Tarasov, I.S. ; Bagaev, T.A. ; Zverkov, M.V. ; Konyaev, V.P. ; Kurniavko, Y.V. ; Ladugin, M.A. ; Marmalyuk, A.A. ; Padalitsa, A.A. ; Simakov, V.A.

Author_Institution

Ioffe Phys.-Tech. Inst., St. Petersburg, Russia

fYear

2014

fDate

12-16 Oct. 2014

Firstpage

459

Lastpage

460

Abstract

We present the latest theoretical and experimental results on nonlinear dynamic characteristics of laser-thyristor. We have experimentally demonstrated 4MHz/4.5W high frequency lasing of laser-thyristor in 890-910 nm spectral range. The minimum values of the energy and amplitude of the control current density pulse required to turn on 28 W peak output optical power of laser-thyristor were 1.4 nJ and 0.6 A/cm², respectively.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; nonlinear dynamical systems; semiconductor lasers; thyristors; AlGaAs-GaAs; current density; energy 1.4 nJ; epitaxially-integrated thyristor heterostructure; frequency 4 MHz; high frequency lasing; high power pulse semiconductor laser; nonlinear dynamic characteristics; power 28 W; power 4.5 W; wavelength 890 nm to 910 nm; Laser modes; Laser radar; Laser theory; Nonlinear optics; Optical pulses; Power lasers; Semiconductor lasers; laser-thyristor; pulse laser diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Conference (IPC), 2014 IEEE

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/IPCon.2014.6995447

Filename

6995447