Title :
Silicon-on-insulator (SOI) nanowire hot carrier electroluminescence
Author :
Du Plessis, Monuko ; Venter, Petrus J.
Author_Institution :
Dept. of Electr., Univ. of Pretoria, Tshwane, South Africa
Abstract :
Hot carrier electroluminescence under avalanching conditions in SOI nanowire pn junctions are investigated. Of interest is the spectral content of the light emission, as well as the light extraction efficiency. An order of magnitude improvement in external power efficiency was achieved relative to bulk silicon.
Keywords :
electroluminescence; hot carriers; nanowires; p-n junctions; silicon-on-insulator; SOI nanowire pn junctions; Si; avalanching conditions; hot carrier electroluminescence; light emission; light extraction efficiency; magnitude improvement; silicon-on-insulator; spectral content; CMOS integrated circuits; Electric fields; Electroluminescence; Hot carriers; Junctions; Photonics; Silicon; SOI; hot carriers; nanowire; silicon electroluminescence;
Conference_Titel :
Photonics Conference (IPC), 2014 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/IPCon.2014.6995500
