• DocumentCode
    1779956
  • Title

    Surface degradation and dielectric response of inorganic fillers in the polyethylene matrix

  • Author

    Vanga-Bouanga, C. ; Savoie, S. ; Frechette, M.F. ; David, E.

  • Author_Institution
    Inst. de Rech. d´Hydro-Quebec (IREQ), Varennes, QC, Canada
  • fYear
    2014
  • fDate
    19-22 Oct. 2014
  • Firstpage
    771
  • Lastpage
    774
  • Abstract
    The dielectric properties of PE composite materials with various inorganic fillers (aluminum oxide, Al2O3; aluminum nitride, AlN, zirconium dioxide, ZrO2, titanium dioxide, TiO2, silicon dioxide, SiO2 boron nitride, BN) were characterized at room temperature using dielectric spectroscopy in a wide range of frequencies (10-2 Hz - 10 kHz). In few cases, we found a slight change of real permittivity (εr) after addition of 20%vol of fillers. The permittivity values found for the different composite films investigated ranged from 2.4 to 22.5 (εr) at 0.1 Hz, depending on the additive. The composites with TiO2 and ZrO2 additives were found to have the highest values of permittivity. Furthermore, at high frequencies, almost all composite films were found to reach a low dielectric constant (i.e. comparable to that of neat PE) whatever the permittivity value of the fillers. Surface erosion tests showed a good surface resistance to partial discharges when the filler permittivity was low.
  • Keywords
    aluminium compounds; boron compounds; partial discharges; permittivity; polyethylene insulation; polymer insulators; silicon compounds; surface resistance; titanium compounds; zirconium compounds; Al2O3; AlN; BN; PE composite materials; SiO2; TiO2; ZrO2; aluminum nitride; aluminum oxide; boron nitride; composite films; dielectric constant; dielectric properties; dielectric response; dielectric spectroscopy; filler permittivity; inorganic fillers; partial discharges; permittivity values; polyethylene matrix; real permittivity; silicon dioxide; surface degradation; surface erosion tests; surface resistance; titanium dioxide; zirconium dioxide; Aluminum oxide; Dielectrics; III-V semiconductor materials; Partial discharges; Permittivity; Resistance; Surface discharges; Al2O3; AlN; BN; SiO2; TiO2; ZrO2; dielectric properties; microcomposite; partials discharges; polyethylene;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena (CEIDP), 2014 IEEE Conference on
  • Conference_Location
    Des Moines, IA
  • Type

    conf

  • DOI
    10.1109/CEIDP.2014.6995751
  • Filename
    6995751