DocumentCode
1780684
Title
On Handling Memory Scan Chains
Author
Bansal, Sunny ; Mendhalkar, Aviansh ; Tekumalla, Ramesh
Author_Institution
LSI India R&D Private Ltd., Pune, India
fYear
2014
fDate
14-16 May 2014
Firstpage
6
Lastpage
10
Abstract
Memories from the Library vendor come as a hard macro in the design. With the increased focus on meeting timing requirements, memories are provided in an integrated form from vendor. These integrated memory hard macros not only consist of SRAM read-write behavior but also comprise of scan chains and bypass logic around SRAM. This bypass logic consists of shadow cells which are already stitched into small scan chains inside the hard macro. Since this whole memory bypass and shadow logic is inside hard macro, it can be treated as a separate timing closed module in the design. Because of the separate timing closure process, there can be an occurrence of timing violation during silicon test on the logic interface between the SoC and the hard macro. There is a need to have an optional mode where designer should have freedom to generate the patterns with or without consideration of the capture mode of the memory scan cells. In this paper, we present a methodology to handle memory scan chains by controlling the memory clock during capture, using a combination of control signals which already exist in the design.
Keywords
SRAM chips; integrated circuit design; integrated circuit testing; integrated logic circuits; system-on-chip; SRAM read-write behavior; SoC; control signals; integrated memory hard macros; library vendor; logic interface; memory bypass logic; memory clock; memory scan cells; memory scan chains; separate timing closure process; shadow cells; silicon test; timing closed module; Built-in self-test; Clocks; Latches; Logic gates; Random access memory; Silicon; Timing; SOC; memory; scan capture and test generation; scan chains; timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Workshop (NATW), 2014 IEEE 23rd North Atlantic
Conference_Location
Johnson City, NY
Print_ISBN
978-1-4799-5134-5
Type
conf
DOI
10.1109/NATW.2014.11
Filename
6875441
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