Title :
Admittance spectroscopy for planar and across measure configuration of metal/porous silicon/Si structures
Author :
Korcala, Andrzej ; Lukasiak, Zbigniew ; Zawadzka, Anna ; Plociennik, Przemyslaw ; Bala, Waclaw ; Boniewiez, Miroslaw
Author_Institution :
Inst. of Phys., Nicolaus Copernicus Univ., Toruń, Poland
Abstract :
In this paper two Porous Silicon (PS) measure configuration (Al/PS/p-Si/Al and Al/PS/Al) are presented. Admittance as a function of frequency and dc bias voltage were in detail analyzed. Admittance spectroscopy is a power tool in the study of semiconductors. We find out conductance and susceptance of single and multilayer structures. Moreover this diagnostic technique gives information about structural properties of investigated material.
Keywords :
aluminium; electric admittance measurement; elemental semiconductors; porous semiconductors; semiconductor-metal boundaries; silicon; Al-Si-Si-Al; across measure configuration; admittance spectroscopy; conductance; dc bias voltage; metal-porous silicon-silicon structures; multilayer structures; planar measure configuration; susceptance; Admittance; Admittance measurement; Biomedical measurement; Frequency measurement; Semiconductor device measurement; Silicon; Wires; admittance spectroscopy; porous silicon;
Conference_Titel :
Transparent Optical Networks (ICTON), 2014 16th International Conference on
Conference_Location :
Graz
DOI :
10.1109/ICTON.2014.6876646
