DocumentCode :
1782158
Title :
The relevance of dephasing in THz intervalence band antipolariton dispersion relations
Author :
Faragai, Inuwa A. ; Pereira, Mauro F.
Author_Institution :
Mater. & Eng. Res. Inst., Sheffield Hallam Univ., Sheffield, UK
fYear :
2014
fDate :
6-10 July 2014
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, we investigate the combined influence of cavity, active region length and dephasing in the coupling of TE polarized THz radiation with intervalence transitions in excited semiconductor quantum well media.
Keywords :
III-V semiconductors; aluminium compounds; dispersion relations; gallium arsenide; polaritons; semiconductor quantum wells; terahertz wave spectra; valence bands; GaAs-Al0.3Ga0.7As; TE polarized THz radiation; THz intervalence band antipolariton dispersion relations; active region length; cavity effect; dephasing effect; excited semiconductor quantum well media; intervalence transitions; Cavity resonators; Couplings; Dispersion; Materials; Microcavities; Optical polarization; Quantum cascade lasers; THz radiation; antipolaritons; intervalence band transitions; many-body effects; polaritons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks (ICTON), 2014 16th International Conference on
Conference_Location :
Graz
Type :
conf
DOI :
10.1109/ICTON.2014.6876654
Filename :
6876654
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1782158
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