Pulse mixing by Fibonacci and Thue-Morse ordered semiconductor layers

Author

Shramkova, O.V. ; Schuchinsky, Alexander G.

Author_Institution

Queen´s Univ. Belfast, Belfast, UK

fYear

2014

fDate

6-10 July 2014

Firstpage

1

Lastpage

4

Abstract

The properties of combinatorial frequency generation by two-tone Gaussian pulses incident at oblique angles on quasiperiodic (Fibonacci and Thue-Morse) stacks of binary semiconductor layers are discussed. The analysis has been performed using the self-consistent model taking into account the nonlinear dynamics of mobile charges in the layers. The effects of the stack arrangements and constituent layer parameters on the combinatorial frequency waveforms are presented for the specific structures of both types.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; multiwave mixing; optical frequency conversion; optical materials; semiconductor materials; Fibonacci stacks; GaAs-InSb; Thue-Morse ordered semiconductor layers; binary semiconductor layers; combinatorial frequency generation; combinatorial frequency waveforms; mobile charges; nonlinear dynamics; pulse mixing; quasiperiodic stacks; self-consistent model; stack arrangements; two-tone Gaussian pulses; Mathematical model; Metamaterials; Periodic structures; Permittivity; Plasmas; Resonant frequency; Scattering; Gaussian pulse; intensity of the scattered wave; nonlinear dielectric susceptibility; three-wave mixing; weak nonlinearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2014 16th International Conference on

Conference_Location

Graz

Type

conf

DOI

10.1109/ICTON.2014.6876714

Filename

6876714